sep-22-2004 1 bc857bl3, BC858BL3 2 3 1 pnp silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? complementary types: bc847bl3, bc848bl3 (npn) type marking pin configuration package bc857bl3 BC858BL3 3f 3k 1 = b 1 = b 2 = e 2 = e 3 = c 3 = c tslp-3-1 tslp-3-1 maximum ratings parameter symbol value unit collector-emitter voltage bc857bl3 BC858BL3 v ceo 45 30 v collector-emitter voltage bc857bl3 BC858BL3 v ces 50 30 collector-base voltage bc857bl3 BC858BL3 v cbo 50 30 emitter-base voltage bc857bl3 BC858BL3 v ebo 5 5 collector current i c 100 ma peak collector current i cm 200 total power dissipation t s 135c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 60 k/w 1 for calculation of r thja please refer to application note thermal resistance
sep-22-2004 2 bc857bl3, BC858BL3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bc857bl3 i c = 10 ma, i b = 0 , BC858BL3 v (br)ceo 45 30 - - - - v collector-base breakdown voltage i c = 10 a, i e = 0 , bc857bl3 i c = 10 a, i e = 0 , BC858BL3 v (br)cbo 50 30 - - - - collector-emitter breakdown voltage i c = 10 a, v be = 0 , bc857bl3 i c = 10 a, v be = 0 , BC858BL3 v (br)ces 50 30 - - - - emitter-base breakdown voltage i e = 0 , i c = 1 a v (br)ebo 5 - - collector-base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 15 5 na dc current gain- i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v h fe - 220 250 290 - 475 - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 75 250 300 650 mv base emitter saturation voltage- 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - base-emitter voltage- 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 600 - 650 - 750 820
sep-22-2004 3 bc857bl3, BC858BL3 ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 8 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h 11e - 4.5 - k ? open-circuit reverse voltage transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e - 2 - 10 -4 short-circuit forward current transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e - 330 - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s
sep-22-2004 4 bc857bl3, BC858BL3 dc current gain h fe = ? ( i c ) v ce = 5 v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c base-emitter saturation voltage i c = ? ( v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c
sep-22-2004 5 bc857bl3, BC858BL3 transition frequency f t = ? ( i c ) v ce = 5 v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c collector-base capacitance c cb = ? ( v cb0 ) emitter-base capacitance c eb = ? ( v eb0 ) 0 4 10 5 10 10 ehp00376 v cb0 c eb0 v 6 2 eb0 v ebo c 8 10 pf 12 cb0 c -1 0 1 c cbo ( ( ) bc 856...860 ) total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
sep-22-2004 6 bc857bl3, BC858BL3 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 h parameter h e = ? ( i c ) normalized v ce = 5v 10 10 10 bc 856...860 ehp00383 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c h parameter h e = ? ( v ce ) normalized i c = 2ma 0 0102030 bc 856...860 ehp00384 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h 11 12 h h 22 c
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